首页 >NP160N04其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFET FEATURES •Superlowon-stateresistance RDS(on)=1.6mΩTYP./2.0mΩMAX.(VGS=10V,ID=80A) •HighCurrentRating ID(DC)=±160A | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP160N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.0mΩMAX.(VGS=10V,ID=80A) •LowCiss:Ciss=6900pFTYP.(VDS=25V,VGS=0V) •Designedforautomotiveappli | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Features ･Superlowon-stateresistance RDS(on)=1.5mMAX.(VGS=10V,ID=80A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･DesignedforautomotiveapplicationandAEC-Q101qualified | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP160N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.5mΩMAX.(VGS=10V,ID=80A) •LowCiss:Ciss=7200pFTYP.(VDS=25V) •Designedforautomotiveapplicat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
