1,048,576-Bit (128K x 8) High Performance CMOS EPROM

General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

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FAIRCHILD

仙童半导体

1,048,576-Bit (128K x 8) High Performance CMOS EPROM

General Description\nThe NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The ‘‘Don’t Care’’ feature during rea ■ High performance CMOS\n   - 90 ns access time\n■ Fast turn-off for microprocessor compatibility\n■ Simplified upgrade path\n   - VPP and PGM are ‘‘Don’t Care’’ during normal read operation\n■ Manufacturers identification code\n■ Fast programming\n■ JEDEC standard pin configurations\n   - 32-pin DI;

TI

德州仪器

Package：32-DIP（0.600"，15.24mm）；包装：管件 类别：集成电路（IC） 存储器 描述：IC EPROM 1MBIT PARALLEL 32DIP

ONSEMI

安森美半导体

Package：32-CDIP（0.685"，17.40mm）窗口；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 存储器 描述：IC EPROM 1MBIT PARALLEL 32CDIP

ONSEMI

安森美半导体

Package：32-CDIP（0.685"，17.40mm）窗口；包装：管件 类别：集成电路（IC） 存储器 描述：IC EPROM 1MBIT PARALLEL 32CDIP

ONSEMI

安森美半导体