isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high fidelity audio amplifier and other linear ap

文件：215.89 Kbytes 页数：2 Pages

ISC

无锡固电

Complementary NPN-PNP Power Bipolar Transistors

文件：108.28 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Silicon PNP transistor in a TO-3P Plastic Package.

文件：1.0425 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

双极功率晶体管，互补，15 A，250 V

The superior gain linearity and safe operating area performance of the Bipolar Power Transistor makes it ideal for high fidelity audio amplifier output stages and other linear applications. • Exceptional Safe Operating Area\n• Reliable performance at higher powers\n• NPN/PNP Gain Matching within 10% from 50mA to 3A\n• Symmetrical characteristics in complementary configurations\n• Excellent Gain Linearity\n• Accurate reproduction of input signal\n• High VCE\n• Greater dynamic range\;

ONSEMI

安森美半导体

PNP Transisitor

MOT

仁懋

180 Watt Silicon Epitaxial Planar PNP Type Power Transistor

DESCRIPTION ·With TO-3PB-SQ pkg ·Complement to type NJW0281A APPLICATIONS ·Power amplifier applications ·Recommended for 150W high fidelity audio frequency amplifier output stage

文件：2.69083 Mbytes 页数：4 Pages

THINKISEMI

思祁半导体

Silicon PNP transistor in a TO-3P Plastic Package.

文件：1.0425 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

150 Watt Silicon Epitaxial Planar PNP Power Transistor

文件：1.44054 Mbytes 页数：4 Pages

THINKISEMI

思祁半导体

Complementary NPN-PNP Power Bipolar Transistors

文件：80.35 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Complementary NPN-PNP Power Bipolar Transistors

文件：108.28 Kbytes 页数：5 Pages

ONSEMI

安森美半导体