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MJD32CT4

ComplementaryPowerTransistors

ONSEMION Semiconductor

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MJD32CT4

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD32CT4

LowvoltagePNPpowertransistor

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD32CT4-A

LowvoltagePNPpowertransistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mountingTO-252powerpacka

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD32CT4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD32CT4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD32CT4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD32CT4G

ComplementaryPowerTransistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJD32CT4G

ComplementaryPowerTransistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJD32CT4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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