ADJUSTABLE HIGH PRECISION SHUNT REGULATOR

文件：223.67 Kbytes 页数：5 Pages

NJRC

日本无线

Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Silicon Gate for Fast Switch

文件：29.58 Kbytes 页数：3 Pages

NTE

Precision, High-Speed Transimpedance Amplifier

文件：362.72 Kbytes 页数：18 Pages

BURR-BROWN

Precision, High-Speed Transimpedance Amplifier

FEATURES > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA (max) OFFSET VOLTAGE: 25μV (max) DYNAMIC RANGE: 4 to 5 Decades DRIFT: 0.1μV/°C (max) GAIN BANDWIDTH: 90MHz QUIESCENT CURRENT: 7.5mA SUPPLY RANGE: 2.7V to 5.5V SINGLE AND DUAL VERSIONS MicroSize

文件：655.51 Kbytes 页数：26 Pages

TI

德州仪器