丝印：QB；Package：SOT23；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：298.11 Kbytes 页数：15 Pages

NEXPERIA

安世

80 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：312.98 Kbytes 页数：16 Pages

NEXPERIA

安世

80 V, 100 mA PNP resistor-equipped transistors

PNP Resistor-Equipped Transistor (RET) family in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n Table 1. Product overview Type number\n R1\n R2\n Package\n NPN complement:\n kΩ\n kΩ\n Nexperia\n NHDTA123JT-Q\n 2.2\n 47\n SOT23\n NHDTC

Nexperia

安世

PNP resistor-equipped transistor

文件：66.38 Kbytes 页数：8 Pages

PHI

PHI

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in an SC-59 plastic package. NPN complement: PDTC114EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

文件：66.92 Kbytes 页数：8 Pages

PHI

PHI

PNP resistor-equipped transistor

文件：69.89 Kbytes 页数：8 Pages

PHI

PHI