IGBT，N 沟道，带低 VF 开关二极管，600V，30A，VCE(sat)=1.4V

NGTB30N60L2WG is an N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V. • IGBT VCE(sat)=1.4V(typ) [IC=30A, VGE=15V]\n• IGBT IC=100A (Tc=25°C)\n• IGBT tf=80ns(typ)\n• 高频应用用开关损失低\n• 最高结温 Tj=175°C\n• Diode VF=1.7V(typ) [IF=30A]\n• Diode trr=70ns(typ)\n• 5µs 抗短路能力\n• 不含铅和卤, 遵守RoHS;

ONSEMI

安森美半导体

N-Channel IGBT

文件：765.89 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 30A TO247

ONSEMI

安森美半导体

Linear L2 Power MOSFET with extended FBSOA

Linear L2™ Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated Features • Designed for linear operation • International standard packages • Avalanche rated • Molding epoxies meet UL 94 V-0 flammability classification • Guaranteed FBSOA at 75°C Applications • Solid

文件：147.18 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.46 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：301.46 Kbytes 页数：2 Pages

ISC

无锡固电