首页 >NFI10K100TRF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNDarlingtionPowerTransistor DESCRIPTION •HighDCcurrentgain •Collector-EmitterSustainingVoltageVCEO(SUS)=100V(Min) •ComplementtotypePMD11K100 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconPowerDarlingtonTransistors | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
iscSiliconNPNDarlingtionPowerTransistor DESCRIPTION •HighDCcurrentgain •Collector-EmitterSustainingVoltageVCEO(SUS)=100V(Min) •ComplementtotypePMD11K100 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerTransistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SILICONPOWERDARLINGTRANSISTORSl SILICONPOWERDARLINGTONTRANSISTORS | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
HighCurrentDensitySurface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurface-MountTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHM3 •Materialcategorization:fordefinition | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurface-MountTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
