NFAM3512L7B数据手册ONSEMI中文资料规格书

描述 Description

These modules integrate optimized gate drive of the built-in novel field stop 7th generation IGBT to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms

特性 Features

• 1200V 35A 3-Phase FS7 IGBT Inverter, Including Control ICs for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs (FS7)
• Built-in Under-voltage Protection (UVP)
• Built-In Bootstrap Diodes/Resistors
• Single-Grounded Power Supply
• UL Certification: E209204
• This is a Pb−Free Device

应用 Application

HVAC, Heat Pumps, Commercial Air conditionner Variable Frequency Drive(VFD) Industrial Pumps Servo, Robotics