NFAM2012L5B中文资料Intelligent Power Module, SPM31, 1200V, 20A数据手册ONSEMI规格书

描述 Description

These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown,thermal monitoring of drive IC, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms.

特性 Features

• 1200 V - 20 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection
• Highly integrated module with optimized components
• Low-Loss, Short-Circuit Rated IGBTs (FSII)
• High efficient and high robust product
• Very Low Thermal Resistance Using
• High reliability, minimize system size
• Built-In Bootstrap Diodes and Dedicated Vs Pins
• Easy peripheral layout & stable operation
• Single-Grounded Power Supply
• Simplify peripheral PCB layout
• Isolation Rating: 2500 Vrms / 1 min.
• UL1557 surtification

应用 Application

• Inverter for AC Induction, BLDC, and PMSM motors.
• Factory automation
• Commercial Air conditioner
• HVAC
• Robotics

简介

NFAM2012L5B属于分立半导体产品的功率驱动器模块。由制造生产的NFAM2012L5B功率驱动器模块功率驱动器模块为电源组件（通常为半桥或单相、两相或三相配置的 IGBT 和 MOSFET）提供物理防护。功率半导体或裸片将焊接或烧结在基材上，后者可承载功率半导体并在需要时提供电和热触点以及电绝缘。功率模块提供更高的功率密度，并且在许多情况下更可靠且更易于冷却。