NEZ3642-8D中文资料4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET数据手册Renesas规格书

描述 Description

DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are
designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.FEATURES
• Internally matched to 50 Ω
• High power output
• High linear gain
• High reliability
• Low distortion

特性 Features

• Internally matched to 50 Ω
• High power output
• High linear gain
• High reliability
• Low distortion