NEZ1011-4E数据手册Renesas中文资料规格书

描述 Description

DESCRIPTION
The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.FEATURES
• High Output Power : Po (1 dB) = +36.5 dBm typ.
• High Linear Gain : 8.0 dB typ. (NEZ1011-4E), 7.0 dB typ. (NEZ1414-4E)
• High Efficiency : 30 % typ.
• Input and Output Internally Matched for Optimum performance

特性 Features

• High Output Power : Po (1 dB) = +36.5 dBm typ.
• High Linear Gain : 8.0 dB typ. (NEZ1011-4E), 7.0 dB typ. (NEZ1414-4E)
• High Efficiency : 30 % typ.
• Input and Output Internally Matched for Optimum performance