NESG204619-T1规格书应用电路贸易商瑞萨-114ic电子网

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NESG204619-T1	文件：302.01 Kbytes Page：10 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG204619-T1-A	文件：116.48 Kbytes Page：3 Pages	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NESG204619-T1-A	文件：302.01 Kbytes Page：10 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG204619-T1-A	文件：320.74 Kbytes Page：4 Pages	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION	CEL California Eastern Labs	CEL

更多NESG204619-T1供应商更新时间2025-7-23 15:14:00