首页 >NESG2021M05-T1,2SC3014,UPG2013TQ-E1-A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz •Maximumstablepowergain:MSG=22.5dBT | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz •Maximumstablepowergain:MSG=22.5dBT | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NECsNPNSiGeHIGHFREQUENCYTRANSISTOR | CEL California Eastern Labs | CEL |
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