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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NE6501077	文件：196.44 Kbytes Page：8 Pages	GaAsMESFET 10WL,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6501077ispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinL,Sband. Toreducethermalresistance,thedevicehasaPHS (PlatedHeatSink)structure. FEATURES •ClassAoperation •H	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NE6501077	文件：32.95 Kbytes Page：2 Pages	L/SBANDMEDIUMPOWERGaAsMESFET	CEL California Eastern Labs	CEL
NE6501077	文件：37.74 Kbytes Page：6 Pages	10WL,S-BANDPOWERGaAsFETN-CHANNELGaAsMESFET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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NE6501077

文件：196.44 Kbytes

Page：8 Pages

GaAsMESFET

10WL,S-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNE6501077ispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinL,Sband. Toreducethermalresistance,thedevicehasaPHS (PlatedHeatSink)structure. FEATURES •ClassAoperation •H

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NE6501077

文件：32.95 Kbytes

Page：2 Pages

L/SBANDMEDIUMPOWERGaAsMESFET

CEL

California Eastern Labs

CEL

NE6501077

文件：37.74 Kbytes

Page：6 Pages

10WL,S-BANDPOWERGaAsFETN-CHANNELGaAsMESFET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

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