IGBT

NEXGEN POWER

N-Channel Enhancement Mode Power MOSFET

Description The RM100N65DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

文件：278.89 Kbytes 页数：7 Pages

RECTRON

丽正国际

650V/100mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power supply PV inverter Unint

文件：321.76 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

650V/100mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power supply PV inverter Unint

文件：317.98 Kbytes 页数：4 Pages

GWSEMI

唯圣电子