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NE8500295-6中文资料瑞萨数据手册PDF规格书
NE8500295-6规格书详情
DESCRIPTION
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.
NE8500200 is the six-cells recessed gate chip used in ‘95’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation
• High power output
• High reliability
产品属性
- 型号:NE8500295-6 
- 功能描述:射频GaAs晶体管 2W C Band MESFET 
- RoHS:否 
- 制造商:TriQuint Semiconductor 
- 技术类型:pHEMT 
- 频率:500 MHz to 3 GHz 
- 增益:10 dB 
- 噪声系数:正向跨导 
- gFS(最大值/最小值):4 S 漏源电压 
- 闸/源击穿电压:- 8 V 
- 漏极连续电流:3 A 
- 最大工作温度:+ 150 C 
- 功率耗散:10 W 
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| RENESAS/瑞萨 | 20+ | SOT423 | 49000 | 原装优势主营型号-可开原型号增税票 | 询价 | ||
| RENESAS/瑞萨 | 24+ | NA/ | 15200 | 优势代理渠道,原装正品,可全系列订货开增值税票 | 询价 | ||
| ZXV | 20+ | SOT-523 | 90000 | 原装现货支持BOM配单服务 | 询价 | ||
| CEL | 24+ | 原厂原封 | 4000 | 原装正品 | 询价 | ||
| NEC | 22+ | SOT343 | 3000 | 原装正品,支持实单 | 询价 | ||
| RENESAS | 2016+ | SOT423 | 15200 | 一级代理,专注军工、汽车、医疗、工业、新能源、电力 | 询价 | ||
| NEC | 25+ | SOP-8 | 18000 | 原厂直接发货进口原装 | 询价 | ||
| NECELECTRON | 6000 | 面议 | 19 | DIP/SMD | 询价 | ||
| NEC | 23+ | TO-59 | 8510 | 原装正品代理渠道价格优势 | 询价 | ||
| ST | 25+ | DIP8 | 3629 | 原装优势!房间现货!欢迎来电! | 询价 | 


