NE71300中文资料LOW NOISE L TO K-BAND GaAs MESFET数据手册Renesas规格书

描述 Description

DESCRIPTION
The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is suitable for both amplifier and oscillator applications in the consumer and industrial markets.FEATURES
• LOW NOISE FIGURE
   NF = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN
   GA = 9.5 dB TYP at f = 12 GHz
• LG = 0.3 µm, WG = 280 µm
• EPITAXIAL TECHNOLOGY
• LOW PHASE NOISE

特性 Features

• LOW NOISE FIGURE
   NF = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN
   GA = 9.5 dB TYP at f = 12 GHz
• LG = 0.3 µm, WG = 280 µm
• EPITAXIAL TECHNOLOGY
• LOW PHASE NOISE