NE68800中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount package styles, and in chip form.

FEATURES

• LOW PHASE NOISE DISTORTION

• LOW NOISE: 1.5 dB at 2.0 GHz

• LOW VOLTAGE OPERATION

• LARGE ABSOLUTE MAXIMUM COLLECTOR

CURRENT: IC MAX = 100 mA

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES

• ALSO AVAILABLE IN CHIP FORM