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NE661M04	文件：188.31 Kbytes Page：10 Pages	NPNSILICONHIGHFREQUENCYTRANSISTOR DESCRIPTION NECsNE661M04isfabricatedusingNECsUHS025GHzfTwaferprocess.Withatypicaltransitionfrequencyof25GHztheNE661M04isusableinapplicationsfrom100MHzto10GHz.TheNE661M04providesexcellentlowvoltage/lowcurrentperformance. NECsnewlowprofile/flatleadstyle	CEL California Eastern Labs	CEL
NE661M04	文件：70.63 Kbytes Page：7 Pages	NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm)	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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NE661M04

文件：188.31 Kbytes

Page：10 Pages

NPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNE661M04isfabricatedusingNECsUHS025GHzfTwaferprocess.Withatypicaltransitionfrequencyof25GHztheNE661M04isusableinapplicationsfrom100MHzto10GHz.TheNE661M04providesexcellentlowvoltage/lowcurrentperformance. NECsnewlowprofile/flatleadstyle

CEL

California Eastern Labs

CEL

NE661M04

文件：70.63 Kbytes

Page：7 Pages

NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

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