NE6510379A数据手册Renesas中文资料规格书

描述 Description

DESCRIPTION
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.FEATURES
• GaAs HJ-FET Structure
• High Output Power :
   PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
   PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
• High Linear Gain :
   GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty
   GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty
• High Power Added Efficiency:
   58% typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
   52% typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

特性 Features

• GaAs HJ-FET Structure
• High Output Power :
   PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
   PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
• High Linear Gain :
   GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty
   GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty
• High Power Added Efficiency:
   58% typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
   52% typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty