NE57811S数据手册恩XP中文资料规格书

描述 Description

OverviewThe NE57811 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions.
The NE57811 DDR termination regulator maintains an output voltage (DDR reference bus voltage) that is one-half that of the RAM supply voltage. It is capable of providing up to +-3.5 A for sustained periods. Overcurrent limiting protects the NE57811 from inrush currents at start-up, and overtemperature shutdown protects the device in extreme temperature situations.
The SPAK-5 (SOT756) package is thermally robust for flexibility of thermal design. Because the NE57811 is a linear regulator, no external inductors or switching FETs are necessary. Fast response to load changes reduces the need for output capacitors.

特性 Features

•Fast transient response time

•Overtemperature protection

•Overcurrent protection

•Commercial (0 Cel to +70 Cel) temperature range

•Reduced need for external components (switching FETs, inductors, decoupling capacitors)

•Internal divider maintains termination voltage at 1/2 memory supply voltage

•Reference out for other memory and control components

•Shutdown pin that may be used to put the device into low power mode

•Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM systems

应用 Application

Desktop microcomputer systems

Workstations

Servers

Game machines

Set top boxes

Embedded systems

Digital video recorders