NE57810TK

高级DDR存储器端接电源，采用外部基准电压; \n• Fast transient response time\n• Overtemperature protection\n• Overcurrent protection\n• Commercial (0 °C to +70 °C) temperature range\n• Reduced need for external components (switching FETs, inductors, decouplingcapacitors)\n• Internal divider maintains termination voltage at half the memory supply voltage\n• Reference out for other memory and control components\n• Optional external voltage reference in for flexible application\n• Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM systems\nTarget Applications\n• Desktop microcomputer systems\n• Workstations\n• Servers\n• Game machines\n• Set top boxes\n• Embedded systems\n;

The NE57810TK is designed to provide power for termination of a Double Data Rate(DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overallsystem cost compared to previous solutions.\nThe NE57810TK DDR termination regulator maintains an output voltage (DDR referencebus voltage) that is half the RAM supply voltage. It is capable of providing up to ± 3.5 A forsustained periods. Overcurrent limiting protects the NE57810TK from inrush currents atstart-up. Overtemperature shutdown protects the device in extreme temperaturesituations.\nThe package is thermally robust for flexibility of thermal design. The NE57810TK is alinear regulator so no external inductors or switching FETs are necessary. Fast responseto load changes reduces the need for output capacitors.\n

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NE57810TK

Advanced DDR memory termination power with external reference voltage in

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NE57810

AdvancedDDRmemoryterminationpowerwithexternalreferencein

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NE57810S

AdvancedDDRmemoryterminationpowerwithexternalreferencein

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