NE5500434中文资料瑞萨数据手册PDF规格书

N-CHANNEL SILICON POWER MOS FET

POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS

DESCRIPTION

The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lateral MOS

FET), housed in a surface mount 3-pin power minimold (34 PKG) (SOT-89 type) package. The device can deliver 35

dBm output power with 63 power added efficiency at 900 MHz under the 4.8 V supply voltage.

The NE5500434 also can deliver 31.5 dBm output power with 60 power added efficiency at 3.6 V.

FEATURES

• High output power : Pout = 35 dBm TYP. (VDS = 4.8 V, f = 900 MHz, Pin = 25 dBm)

: Pout = 31.5 dBm TYP. (VDS = 3.6 V, f = 900 MHz, Pin = 20 dBm)

• High power added efficiency : ηadd = 60 TYP. (VDS = 4.8 V, f = 900 MHz)

• High linear gain : GL = 14.0 dB TYP. (VDS = 4.8 V, f = 900 MHz)

• Surface mount package : 3-pin power minimold (34 PKG) (SOT-89 type)

• Single supply : VDS = 4.8 V for GSM class 4 handsets