NE5500134规格书应用电路供应代理瑞萨第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NE5500434	文件：290.08 Kbytes Page：9 Pages	丝印：V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NE5500434-AZ	文件：290.08 Kbytes Page：9 Pages	丝印：V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NE5500434-T1	文件：290.08 Kbytes Page：9 Pages	丝印：V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NE5500434-T1-AZ	文件：290.08 Kbytes Page：9 Pages	丝印：V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NE5500479A	文件：285.57 Kbytes Page：11 Pages	SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi 文件：285.57 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NE5500479A-T1	文件：285.57 Kbytes Page：11 Pages	丝印：R4；Package：79A；SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi 文件：285.57 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NE5500134-A	文件：137.58 Kbytes Page：2 Pages	RF & Microwave device 文件：137.58 Kbytes 页数：2 Pages	RENESAS 瑞萨	RENESAS
NE5500179A	文件：66.75 Kbytes Page：11 Pages	SILICON POWER MOS FET 文件：66.75 Kbytes 页数：11 Pages	NEC 瑞萨	NEC
NE5500179A	文件：43.61 Kbytes Page：5 Pages	4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS 文件：43.61 Kbytes 页数：5 Pages	CEL	CEL
NE5500179A-T1	文件：43.61 Kbytes Page：5 Pages	4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS 文件：43.61 Kbytes 页数：5 Pages	CEL	CEL

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	NE5500134	RENESAS/瑞萨	25+	SOT-89	20300	RENESAS/瑞萨原装特价NE5500134即刻询购立享优惠#长期有货	询价
深圳市河锋鑫科技有限公司	NE5500134	RENESAS/瑞萨	20+	SOT-89	120000	原装正品可含税交易	询价
深圳市科芯源微电子有限公司	NE5500134	RENESAS/瑞萨	23+	SOT-89	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市坤融电子科技有限公司	NE5500134	RENESAS/瑞萨	2025+	SOT-89	5000	原装进口价格优请找坤融电子!	询价
深圳市创新迹电子有限公司	NE5500134	RENESAS/瑞萨	22+	SOT-89	20000	只做原装	询价
深圳市一线半导体有限公司	NE5500134-T1/V125	NEC	24+	SOT-89	12200	新进库存/原装	询价
深圳诚思涵科技有限公司	NE5500134-T1-AZ	NEC	19+	SOD-89	200000		询价
瀚佳科技(深圳)有限公司	NE5500134-T1/5	NEC	24+	SOT-89	65200	一级代理/放心采购	询价
深圳市宇创芯科技有限公司	NE5500134-T1	NEC	24+	SOT-89	9600	原装现货,优势供应,支持实单!	询价
深圳市威尔健半导体有限公司	NE5500134-T1	NEC	23+	SOT89	50000	全新原装正品现货,支持订货	询价

更多NE550供应商更新时间2026-3-14 11:13:00

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