型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
NE219 | NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE 文件:550.89 Kbytes 页数:12 Pages | NEC 瑞萨 | NEC | |
NE219 | NPN SILICON HIGH FREQUENCY TRANSISTOR | Renesas 瑞萨 | Renesas | |
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE 文件:550.89 Kbytes 页数:12 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE 文件:550.89 Kbytes 页数:12 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE 文件:550.89 Kbytes 页数:12 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE 文件:550.89 Kbytes 页数:12 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz. 文件:35.71 Kbytes 页数:1 Pages | ASI | ASI | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE 文件:550.89 Kbytes 页数:12 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE 文件:550.89 Kbytes 页数:12 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON HI FREQUNCY TRANSISTOR | ASI Semiconductor | ASI Semiconductor |
详细参数
- 型号:
NE219
- 制造商:
NEC
- 制造商全称:
NEC
- 功能描述:
NPN SILICON HIGH FREQUENCY TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
31 |
公司优势库存 热卖中! |
询价 | ||||
NEC |
NEW |
原厂封装 |
8293 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
24+ |
1570 |
询价 | |||||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
TO220 |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
22+ |
TO-220 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
SMD |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
IR |
24+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
询价 | ||
原厂 |
2023+ |
TO-220 |
50000 |
原装现货 |
询价 | ||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
询价 |
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