NE02133-T1B中文资料CEL数据手册PDF规格书

DESCRIPTION

NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications.

FEATURES

• HIGH INSERTION GAIN: 18.5 dB at 500 MHz

• LOW NOISE FIGURE: 1.5 dB at 500 MHz

• HIGH POWER GAIN: 12 dB at 2 GHz

• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression