NE021中文资料瑞萨数据手册PDF规格书

DESCRIPTION

NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide wide dynamic ranges; the excellent linearity of S21 with collector current assures low low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability.

FEATURES

• HIGH INSERTION GAIN: 18.5 dB at 500 MHz

• LOW NOISE FIGURE: 1.5 dB at 500 MHz

• HIGH POWER GAIN: 12 dB at 2 GHz

• LARGE DYNAMIC RANGE: 19 dBm at 1 dB 2 GHz Gain Compression