丝印：NDS9948；Package：SO-8；Dual 60V P-Channel PowerTrench??MOSFET

文件：272.1 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NDS9948；Package：SO-8；Dual 60V P-Channel PowerTrench??MOSFET

文件：272.1 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –2.3 A, –60 V RDS(ON)= 250 mΩ@ VGS

文件：342.89 Kbytes 页数：10 Pages

Fairchild

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Dual P-Channel 6 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05431 Mbytes 页数：9 Pages

VBSEMI

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Dual 60V P-Channel PowerTrench MOSFET

文件：142.07 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Dual 60V P-Channel PowerTrench MOSFET

文件：142.07 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Dual 60V P-Channel PowerTrench??MOSFET

文件：265.95 Kbytes 页数：6 Pages

Fairchild

仙童半导体