Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

文件：101.89 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

文件：498.73 Kbytes 页数：16 Pages

TI

德州仪器

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

1FEATURES • 9 GHz Bandwidth • 2.4 kΩ Differential Small Signal Transimpedance • -20dBm Sensitivity • 0.95 μARMS Input Referred Noise • 2.5 mAPP Input Overload Current • Received Signal Strength Indication (RSSI) • 90 mW Typical Power Dissipation • CML Data Outputs with On-Chip 50Ω Back-Te

文件：546.43 Kbytes 页数：16 Pages

TI

德州仪器

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

文件：498.73 Kbytes 页数：16 Pages

TI

德州仪器