Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited fo

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FAIRCHILD

仙童半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

NECs 1550 nm InGaAsP MQW DFB LASER DIODE

文件：98.61 Kbytes 页数：5 Pages

NEC

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NECs 1550 nm InGaAsP MQW DFB LASER DIODE

文件：98.61 Kbytes 页数：5 Pages

NEC

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LASER DIODE

1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed- Back (DFB) laser diode coaxial modules with single mode fiber. These modules are ideal as a light sour

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RENESAS

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