Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perf

文件：74.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

OPT8320 3D Time-of-Flight Sensor

文件：1.98432 Mbytes 页数：88 Pages

TI

德州仪器

OPT8320 3D Time-of-Flight Sensor

文件：563.1 Kbytes 页数：12 Pages

TI

德州仪器

OPT8320 3D Time-of-Flight Sensor

文件：1.98432 Mbytes 页数：88 Pages

TI

德州仪器