N-Channel Depletion-Mode MOSFET Transistors

Features ● High Breakdown Voltage: 220 V ● Normally “On” Low rDS Switch: 9 Ω ● Low Input and Output Leakage ● Low-Power Drive Requirement ● Low Input Capacitance Benefits ● Full-Voltage Operation ● Low Offset Voltage ● Low Error Voltage ● Easily Driven Without Buffe

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TEMIC

场效应管(MOSFET)

SILICONIX

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

文件：67.28 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体