Isolated High Current IGBT/MOSFET Gate Driver

NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

文件：1.18417 Mbytes 页数：24 Pages

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Isolated High Current IGBT/MOSFET Gate Driver

NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

文件：1.19251 Mbytes 页数：24 Pages

ONSEMI

安森美半导体

Isolated High Current IGBT/MOSFET Gate Driver

NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

文件：1.19251 Mbytes 页数：24 Pages

ONSEMI

安森美半导体

Isolated High Current IGBT Gate Driver

文件：646.81 Kbytes 页数：24 Pages

ONSEMI

安森美半导体

Isolated High Current IGBT/MOSFET Gate Driver

NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

文件：1.18417 Mbytes 页数：24 Pages

ONSEMI

安森美半导体