Isolated High Current IGBT Gate Driver

NCV57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot

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安森美半导体

Isolated High Current IGBT Gate Driver

文件：229.86 Kbytes 页数：14 Pages

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安森美半导体

Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation

NCV57001 is a high−current single channel IGBT driver with internal\ngalvanic isolation, designed for high system efficiency and reliability\nin high power applications. Its features include complementary inputs,\nopen drain FAULT and Ready outputs, active Miller clamp, accurate\nUVLOs, DESAT protec • High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages\n• Improves system efficiency\n• Short Propagation Delays with Accurate Matching\n• Improves PWM signal integrity\n• DESAT with Soft Turn Off\n• Protection against overload and short circuits\n• Active Miller Clamp and Negative Gate Volt;

ONSEMI

安森美半导体

Isolated High Current IGBT Gate Driver

NCD57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot

文件：519.919 Kbytes 页数：22 Pages

ONSEMI

安森美半导体

Isolated High Current IGBT Gate Driver

文件：230.22 Kbytes 页数：14 Pages

ONSEMI

安森美半导体