NCV57001DWR2G中文资料安森美半导体数据手册PDF规格书

NCV57001 is a high−current single channel IGBT driver with

internal galvanic isolation, designed for high system efficiency and

reliability in high power applications. Its features include

complementary inputs, open drain FAULT and Ready outputs, active

Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off

at DESAT. NCV57001 accommodates both 5 V and 3.3 V signals on

the input side and wide bias voltage range on the driver side including

negative voltage capability. NCV57001 provides > 5 kVrms

(UL1577 rating) galvanic isolation and > 1200 VIORM (working

voltage) capabilities. NCV57001 is available in the wide−body

SOIC−16 package with guaranteed 8 mm creepage distance between

input and output to fulfill reinforced safety insulation requirements.

特性 Features

• High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages

• Low Output Impedance for Enhanced IGBT Driving

• Short Propagation Delays with Accurate Matching

• Active Miller Clamp to Prevent Spurious Gate Turn−on

• DESAT Protection with Programmable Delay

• Negative Voltage (Down to −9 V) Capability for DESAT

• Soft Turn Off During IGBT Short Circuit

• IGBT Gate Clamping During Short Circuit

• IGBT Gate Active Pull Down

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2

• 3.3 V to 5 V Input Supply Voltage

• Designed for AEC−Q100 Certification

• 5000 V Galvanic Isolation (to meet UL1577 Requirements)

• 1200 V Working Voltage (per VDE0884−10 Requirements)

• High Transient Immunity

• High Electromagnetic Immunity

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

Typical Applications

• Automotive Power Supplies

• HEV/EV Powertrain

• OBC

• BSG

• EV Charger

• PTC Heater