NCV51752BDDR2G中文资料安森美半导体数据手册PDF规格书

The NCV51752 is a family of isolated single−channel gate driver

with 4.5−A/9−A source and sink peak current respectively. They are

designed for fast switching to drive power MOSFETs and SiC

MOSFET power switches. The NCV51752 offers short and matched

propagation delays. For improved reliability, dV/dt immunity and

even faster turn−off, the NCV51752 can utilize to generate a negative

bias rail. The NCV51752 is available in a 4 mm SOIC−8 package and

can support isolation voltage up to 3.75 kVRMS. The NCV51752

offers other important protection function such as independent

under−voltage lockout for both−side driver.

特性 Features

• Feature Options

♦ VCC UVLO Referenced to GND2

♦ Built−in Negative Bias between GND2 and VEE Pins

Selectable Negative Bias Levels via Trim

• 3−V to 20−V Input Supply Voltage

• Output Supply Voltage from 6.5 V to 30 V with 6−V and 8−V for

MOSFET, 12−V and 17−V for SiC, Threshold

• 4.5−A Peak Source, 9−A Peak Sink Output Current Capability

• Minimum CMTI of 200 V/ns dV/dt

• Negative 5−V Handling Capability on Input Pins

• Propagation Delay Typical 36 ns with

♦ 5 ns Max Delay Matching

• AEC−Q100 Qualified for Automotive Application Requirements

• Isolation & Safety

♦ 3.75 kVRMS Isolation for 1 Minute (per UL1577 Requirements)

(Planned)

♦ CQC Certification per GB4943.1−2011 (Planned)

♦ SGS FIMO Certification per IEC 62386−1 (Planned)

Typical Applications

• On−board Chargers

• xEV DC−DC Converters

• Traction Inverters

• Charging Stations