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NCP51810AMNTWG集成电路(IC)栅极驱动器规格书PDF中文资料
厂商型号 |
NCP51810AMNTWG |
参数属性 | NCP51810AMNTWG 封装/外壳为15-VFQFN;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为集成电路(IC) > 栅极驱动器;产品描述:HIGH SPEED HALF-BRIDGE DRIVER FO |
功能描述 | High Speed Half-Bridge Driver for GaN Power Switches |
文件大小 |
774.9 Kbytes |
页面数量 |
20 页 |
生产厂商 | ON Semiconductor |
企业简称 |
ONSEMI【安森美半导体】 |
中文名称 | 安森美半导体公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-14 18:57:00 |
NCP51810AMNTWG规格书详情
The NCP51810 high−speed, gate driver is designed to meet the
stringent requirements of driving enhancement mode (e−mode), high
electron mobility transistor (HEMT), gallium nitrade (GaN) power
switches in medium−voltage half−bridge DC−DC application. The
NCP51810 offers short and matched propagation delays with
advanced level shift technology providing −3.5 V to +150 V (typical)
common mode voltage range for the high−side drive and −3.5 V to
+3.5 V common mode voltage range for the low−side drive. In
addition, the device provides stable dV/dt operation rated up to 200
V/ns for both driver output stages in high speed switching
applications.
To fully protect the gate of the GaN power transistor against
excessive voltage stress, both drive stages employ a dedicated voltage
regulator to accurately maintain the gate−source drive signal
amplitude. The circuit actively regulates the driver’s bias rails and thus
protects against potential gate−source over−voltage under various
operating conditions.
The NCP51810 offers important protection functions such as
independent under−voltage lockout (UVLO), monitoring VDD bias
voltage and VDDH and VDDL driver bias and thermal shutdown
based on die junction temperature of the device. Programmable
dead−time control can be configured to prevent cross−conduction.
Features
• 150 V, Integrated High−Side and Low−Side Gate Drivers
• UVLO Protections for VDD High and Low−Side Drivers
• Dual TTL Compatible Schmitt Trigger Inputs
• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment
• Source Capability: 1 A; Sink Capability: 2 A
• Separated HO and LO Driver Output Stages
• 1 ns Rise and Fall Times Optimized for GaN Devices
• SW and PGND: Negative Voltage Transient up to 3.5 V
• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
• Maximum Propagation Delay of Less Than 50 ns
• Matched Propagation Delays to Less Than 5 ns
• User Programmable Dead−Time Control
• Thermal Shutdown (TSD)
Typical Applications
• Driving GaN Power Transistors used in Full or Half−Bridge, LLC,
Active Clamp Flyback or Forward and Synchronous Rectifier
Topologies
• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Industrial Modules
NCP51810AMNTWG属于集成电路(IC) > 栅极驱动器。安森美半导体公司制造生产的NCP51810AMNTWG栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能,这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备(通常为 FET 或 IGBT)。任何特定设备提供的确切功能各不相同,但与它适合驱动的半导体配置相关。
产品属性
- 产品编号:
NCP51810AMNTWG
- 制造商:
onsemi
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 驱动配置:
半桥
- 通道类型:
单路
- 栅极类型:
N 沟道 MOSFET
- 电压 - 供电:
9V ~ 17V
- 电流 - 峰值输出(灌入,拉出):
1A,2A
- 输入类型:
非反相
- 上升/下降时间(典型值):
2ns,1.5ns
- 工作温度:
150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
15-VFQFN
- 供应商器件封装:
15-QFN(4x4)
- 描述:
HIGH SPEED HALF-BRIDGE DRIVER FO
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON |
11+ |
124 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 | |||
ON |
24+ |
QFN-15 |
25000 |
ON全系列可订货 |
询价 | ||
进口 |
23+ |
SOP8 |
9280 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
onsemi(安森美) |
2021+ |
QFN-15 |
499 |
询价 | |||
ON |
23+ |
SOP8 |
28610 |
询价 | |||
ON |
2023+ |
SOP8 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ONSEMICONDUCTOR |
2021+ |
N/A |
6800 |
只有原装正品 |
询价 | ||
ON |
23+ |
原厂原封 |
22 |
订货1周 原装正品 |
询价 | ||
ON |
21+ |
SOP8 |
6500 |
全新原装现货 |
询价 |