NCP51810集成电路（IC）的栅极驱动器规格书PDF中文资料

NCP51810属于集成电路（IC）的栅极驱动器。由安森美半导体制造生产的NCP51810栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

The NCP51810 high−speed, gate driver is designed to meet the

stringent requirements of driving enhancement mode (e−mode), high

electron mobility transistor (HEMT), gallium nitrade (GaN) power

switches in medium−voltage half−bridge DC−DC application. The

NCP51810 offers short and matched propagation delays with

advanced level shift technology providing −3.5 V to +150 V (typical)

common mode voltage range for the high−side drive and −3.5 V to

+3.5 V common mode voltage range for the low−side drive. In

addition, the device provides stable dV/dt operation rated up to 200

V/ns for both driver output stages in high speed switching

applications.

To fully protect the gate of the GaN power transistor against

excessive voltage stress, both drive stages employ a dedicated voltage

regulator to accurately maintain the gate−source drive signal

amplitude. The circuit actively regulates the driver’s bias rails and thus

protects against potential gate−source over−voltage under various

operating conditions.

The NCP51810 offers important protection functions such as

independent under−voltage lockout (UVLO), monitoring VDD bias

voltage and VDDH and VDDL driver bias and thermal shutdown

based on die junction temperature of the device. Programmable

dead−time control can be configured to prevent cross−conduction.

特性 Features

• 150 V, Integrated High−Side and Low−Side Gate Drivers

• UVLO Protections for VDD High and Low−Side Drivers

• Dual TTL Compatible Schmitt Trigger Inputs

• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment

• Source Capability: 1 A; Sink Capability: 2 A

• Separated HO and LO Driver Output Stages

• 1 ns Rise and Fall Times Optimized for GaN Devices

• SW and PGND: Negative Voltage Transient up to 3.5 V

• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry

• Maximum Propagation Delay of Less Than 50 ns

• Matched Propagation Delays to Less Than 5 ns

• User Programmable Dead−Time Control

• Thermal Shutdown (TSD)

Typical Applications

• Driving GaN Power Transistors used in Full or Half−Bridge, LLC,

Active Clamp Flyback or Forward and Synchronous Rectifier

Topologies

• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,

Industrial Modules