NCP51100A中文资料Single 2 A High-Speed, Low-Side Gate Driver数据手册ONSEMI规格书

描述 Description

The NCP51100 2 A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with TTL input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. The NCP51100 delivers fast MOSFET switching performance, which helps maximizeefficiency in high frequency power converter designs. NCP51100 drivers incorporate MillerDrive™ architecture for the final output stage. This bipolar-MOSFET combination provides high peak current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability. The NCP51100 is available in industrystandard, 5-pin, SOT23.

特性 Features

• 3 A Peak Sink/Source at VDD = 12 V
• High current capability
• 4.5 to 18 V Operating Range
• 2.5 A Sink / 1.8 A Source at Vout = 6 V
• Dual-Logic Inputs Allow Configuration as Non-Inverting or Inverting with Enable Function
• Internal Resistors Turn Driver Off If No Inputs
• 14ns Typical Rise Time and 10ns Typical Fall-Time with 1nF Load
• TTL input thresholds
• MillerDrive™ Technology
• Typical Propagation Delay Time Under 20ns with Input Falling or Rising
• 5-Pin SOT23 Packages
• Rated from –40°C to 125°C Ambient

应用 Application

• Air conditioner PFC
• Switch−Mode Power Supplies
• High−Efficiency MOSFET Switching
• Synchronous Rectifier Circuits
• Motor Control
• Air conditioner, SMPS, Motor products

简介

NCP51100A属于集成电路（IC）的栅极驱动器。由ONSEMI制造生产的NCP51100A栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。