NCP5109中文资料MOSFET / IGBT 驱动器，高电压，高压和低压侧，200 V数据手册ONSEMI规格书

描述 Description

The NCP5109 is a High Voltage gate Driver IC providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration version B or any other high-side + low-side configuration version A. It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs.NCP5109 = 200VNCP5106 = 600V

特性 Features

• High Voltage Range: Up to 200 V
• dV/dt Immunity50 V/nsec
• Gate Drive Supply Range from 10 V to 20 V
• High and Low Drive Outputs
• Output Source / Sink Current Capability 250 mA / 500 mA
• 3.3 V and 5 V Input Logic Compatible
• Up to Vcc Swing on Input Pins
• Matched Propagation Delays Between Both Channels
• Outputs in Phase with the Inputs
• Independent Logic Inputs to Accommodate All Topologies (Version A)
• Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B )
• Under Vcc LockOut (UVLO) for Both Channels
• Pin-to-Pin Compatible with Industry Standards
• Half-Bridge Power Converters
• Any Complementary Drive Converters (Asymmetrical Half-Bridge, Active Clamp) (A version only).
• Full-Bridge Converters

应用 Application

• Current Fed push-pull converters
• Half and Full Bridge power converters
• Two switch forward power converters
• Solid state motor drives

简介

NCP5109属于集成电路（IC）的栅极驱动器。由制造生产的NCP5109栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。