NCP302155R

Integrated Driver and MOSFET; • Capable of Average Currents up to 55 A\n• Capable of Peak Currents up to 80 A\n• Capable of Switching at Frequencies up to 2 MHz\n• Compatible with 3.3 V or 5 V PWM Input\n• Responds Properly to 3−level PWM Inputs\n• Internal Bootstrap Diode\n• Supports Intel® Power State 4\n• Thermal Warning output\n;

The NCP302155R integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a single package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP302155R integrated solution greatly reduces package parasitics and board space compared to a discrete component solution.

NCP302155R

Integrated Driver and MOSFET

Features •CapableofAverageCurrentsupto55A •CapableofPeakCurrentsupto80A •CapableofSwitchingatFrequenciesupto2MHz •Compatiblewith3.3Vor5VPWMInput •RespondsProperlyto3−levelPWMInputs •InternalBootstrapDiode •UndervoltageLockout •SupportsIntel®P

NCP302155RMNTWG

Package：PQFN31；Integrated Driver and MOSFET

Features •CapableofAverageCurrentsupto55A •CapableofPeakCurrentsupto80A •CapableofSwitchingatFrequenciesupto2MHz •Compatiblewith3.3Vor5VPWMInput •RespondsProperlyto3−levelPWMInputs •InternalBootstrapDiode •UndervoltageLockout •SupportsIntel®P

NCP302155

IntegratedDriverandMOSFET

NCP302155A

IntegratedDriverandMOSFET

Features •CapableofAverageCurrentsupto55A •CapableofSwitchingatFrequenciesupto2MHz •Compatiblewith3.3Vor5VPWMInput •RespondsProperlyto3−levelPWMInputs •OptionforZeroCrossDetectionwith3−levelPWM •InternalBootstrapDiode •UndervoltageLockout •Supp

NCP302155AMNTWG

IntegratedDriverandMOSFET

Features •CapableofAverageCurrentsupto55A •CapableofSwitchingatFrequenciesupto2MHz •Compatiblewith3.3Vor5VPWMInput •RespondsProperlyto3−levelPWMInputs •OptionforZeroCrossDetectionwith3−levelPWM •InternalBootstrapDiode •UndervoltageLockout •Supp

NCP302155MNTWG

IntegratedDriverandMOSFET