丝印：NCP302155A；Package：PQFN；Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Option for Zero Cross Detection with 3−level PWM • Internal Bootstrap Diode • Undervoltage Lockout • Supp

文件：779 Kbytes 页数：19 Pages

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Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Option for Zero Cross Detection with 3−level PWM • Internal Bootstrap Diode • Undervoltage Lockout • Supp

文件：779 Kbytes 页数：19 Pages

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安森美半导体

Integrated Driver and MOSFETs, 55 A

The NCP302155A, Pin#30 and Pin#31 swapped from NCP302155, integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a single package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP302155A integrated solution greatly reduces p • Average Current up to 55A\n• Higher Efficiency or Less Phase Count Required\n• Capable of Switching at Frequencies up to 2 MHz\n• Smaller Inductor Feasible\n• Compatible with 3.3 V or 5 V PWM Input\n• Flexible to Work with Different PWM Controllers\n• Supports Intel® Power State 4\n• Capable of Lo;

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Package：31-PowerWFQFN；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：INT DRIVER AND MOSFET

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安森美半导体