N沟道 MOSFET

\n The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. \n• VDS = 82V,ID =110A\nRDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)\n• Special process technology for high ESD capability\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high EAS\n• Excellent package for good heat dis;

NCEPower

新洁能

N沟道 MOSFET

\n The NCE82H110D uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS = 82V,I D =110A\nR DS(ON) < 7m? @ V GS =10V (Typ:5.9m?)\n• Special process technology for high ESD capability\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good he;

NCEPower

新洁能

N沟道 MOSFET

NCEPower

新洁能

SOP-8

NCE

上传：深圳市芯巴巴科技有限公司

BGA153

FORESEE/江波龙

上传：深圳市富芯乐电子科技有限公司