N沟道 MOSFET

\n The NCE82H110D uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS = 82V,I D =110A\nR DS(ON) < 7m? @ V GS =10V (Typ:5.9m?)\n• Special process technology for high ESD capability\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good he;

NCEPower

新洁能

SOP-8

NCE

上传：深圳市芯巴巴科技有限公司

BGA153

FORESEE/江波龙

上传：深圳市富芯乐电子科技有限公司

TO-220

NCE(新洁能）

上传：上海闻业电子科技有限公司

TO-220

NCE/新洁能

上传：深圳市芯峰微电子科技有限公司