NCE60P05AS资料datasheet下载原装现货-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NCE60P05AS	文件：300 bytes Page：1 Pages	P沟道 MOSFET	NCEPower 新洁能	NCEPower
NCE60P05BY	文件：381.35 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON) 文件：381.35 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE60P05N	文件：416.25 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON) 文件：416.25 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE60P05R	文件：496.98 Kbytes Page：8 Pages	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON) 文件：496.98 Kbytes 页数：8 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE60P05AS供应商更新时间2025-10-30 11:00:00