Super Trench MOSFET

The NCEP6060GU uses Super Trench technology that is uniquely optimized to provide the most efficient highfrequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switchi • V DS =60V,I D =60AR DS(ON) < 6.2mΩ @ V GS =10V (Typ:5.6mΩ)• Excellent gate charge x R DS(on) product• Very low on-resistance R DS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

新洁能

28-CH PPI Module

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N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

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FAIRCHILD

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