NCE4542K资料datasheet下载批发采购新洁能-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NCE4542K	文件：300 bytes Page：1 Pages	N沟道 MOSFET	NCEPower 新洁能	NCEPower
SI4542	文件：56.76 Kbytes Page：4 Pages	30V Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS 文件：56.76 Kbytes 页数：4 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
SI4542D	文件：56.76 Kbytes Page：4 Pages	30V Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS 文件：56.76 Kbytes 页数：4 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
SI4542DY	文件：56.76 Kbytes Page：4 Pages	30V Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS 文件：56.76 Kbytes 页数：4 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多NCE4542K供应商更新时间2026-7-27 16:07:00