订购数量 | 价格 |
---|---|
1+ |
NAND512W3A2SZAXE 集成电路(IC)存储器 MICRON/美光
- 详细信息
- 规格书下载
产品参考属性
- 类型
描述
- 产品编号:
NAND512W3A2SZAXE
- 制造商:
Micron Technology Inc.
- 类别:
- 包装:
托盘
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
闪存 - NAND
- 存储容量:
512Mb(64M x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
50ns
- 电压 - 供电:
2.7V ~ 3.6V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
63-TFBGA
- 供应商器件封装:
63-VFBGA(9x11)
- 描述:
IC FLSH 512MBIT PARALLEL 63VFBGA
供应商
相近型号
- NAND512W3A2SNX
- NANDA8R3NOAZBB5E
- NAND512W3A2SN6F
- NANDA8R4N4AZBB5
- NAND512W3A2SN6E
- NANDA8R4N4AZBB5E
- NAND512W3A2SN6
- NANDA9R3N0BZBB5
- NAND512W3A2DZA6E
- NANDA9R3N4BZBB5
- NAND512W3A2DZA6
- NANDA9R3N4BZBB5E
- NAND512W3A2DN6E
- NANDA9R3N6CZBB5
- NAND512W3A2DN6
- NANDA9R3NOAP4C5
- NAND512W3A2CZA6E
- NANDA9W3N4BZBB5F
- NAND512W3A2CZA6
- NANDA9W3N6CZBB5E
- NAND512W3A2CN6F
- NANDAAR4N4AZBA5E
- NAND512W3A2CN6E
- NANDB2R3N0BP4E5
- NAND512W3A2CN6
- NANDB2R3N0BP4E5F
- NAND512W3A2BZA6E
- NANDBAR4N2AZBA5E
- NAND512W3A2BZA6
- NANDBAR4N5BZBC5E
- NAND512W3A2BN6E
- NANDBAR4N7BZBC5
- NAND512R3A2SZAXE
- NANDC3R4N5AZCC5
- NAND512R3A2SZA6F
- NANO100KC2BN
- NAND512R3A2SZA6E
- NANO100KD2BN
- NAND512R3A2DZA6E
- NANO100KD3BN
- NAND512R3A2DZA6
- NANO100KE3BN
- NAND512R3A2CZA6E
- NANO100LC2AN
- NAND512R3A2CZA6
- NANO100LC2BN
- NAND256W3A2BZAXE
- NANO100LD2BN
- NAND256W3A2BZA6F
- NANO100LD3BN