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NAND512W3A2BN6F集成电路(IC)的存储器规格书PDF中文资料

厂商型号 |
NAND512W3A2BN6F |
参数属性 | NAND512W3A2BN6F 封装/外壳为48-TFSOP(0.724",18.40mm 宽);包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC FLASH 512MBIT PARALLEL 48TSOP |
功能描述 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
封装外壳 | 48-TFSOP(0.724",18.40mm 宽) |
文件大小 |
916.59 Kbytes |
页面数量 |
57 页 |
生产厂商 | STMICROELECTRONICS |
中文名称 | 意法半导体 |
网址 | |
数据手册 | |
更新时间 | 2025-10-4 20:00:00 |
人工找货 | NAND512W3A2BN6F价格和库存,欢迎联系客服免费人工找货 |
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NAND512W3A2BN6F属于集成电路(IC)的存储器。由意法半导体集团制造生产的NAND512W3A2BN6F存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
SUMMARY DESCRIPTION
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses
the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.
FEATURES SUMMARY
■ HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
■ NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
■ PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
■ BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
■ PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
■ COPY BACK PROGRAM MODE
– Fast page copy without external buffering
■ FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
■ STATUS REGISTER
■ ELECTRONIC SIGNATURE
■ CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
■ SERIAL NUMBER OPTION
■ HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
■ DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
■ RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
■ DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
产品属性
更多- 产品编号:
NAND512W3A2BN6F
- 制造商:
STMicroelectronics
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
闪存 - NAND
- 存储容量:
512Mb(64M x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
50ns
- 电压 - 供电:
2.7V ~ 3.6V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
48-TFSOP(0.724",18.40mm 宽)
- 供应商器件封装:
48-TSOP
- 描述:
IC FLASH 512MBIT PARALLEL 48TSOP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3606 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ST |
BGA |
1884 |
正品原装--自家现货-实单可谈 |
询价 | |||
ST |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
24+ |
BGA |
6300 |
询价 | |||
STMicroelectronics |
18+ |
ICFLASH512MBIT48TSOP |
6580 |
公司原装现货 |
询价 | ||
NUMONYX |
2447 |
FBGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST |
24+ |
BGA |
30617 |
ST一级地代理商原装进口现货 |
询价 | ||
ST |
0747+/0711+ |
BGA |
8 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |